Apparatus for processing substrate

ABSTRACT

A method of processing a substrate having the steps of placing a substrate for forming an LCD on a support, mounting a cover on the substrate in such a manner that a clearance is formed from at least either surface of the substrate placed on the support, introducing developer or pure water into the clearance, bringing the developer or pure water into contact with at least either surface of the substrate, processing the substrate with the developer or pure water, removing the cover from the substrate, and discharging the substrate from the support.

This application is a Division of application Ser. No. 08/635,874, filedon Apr. 18, 1996 now U.S. Pat. No. 5,853,961.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of processing a substrate andan apparatus for processing a substrate such that a substrate, such as asemiconductor wafer or a glass substrate for an LCD, is subjected to acleaning process or a development process.

2. Description of the Related Art

When an LCD (Liquid Crystal Display Device) is manufactured, a so-calledlithography process is employed in order to form a resist film patternon the upper surface of a glass substrate. The lithography processincludes various processes, such as cleaning of a substrate, applying aresist film on the surface of the substrate, exposing the applied resistfilm to light and developing the same. Among the foregoing processes inthe lithography process, the development process is one of processesthat must be severely controlled. In the development process, it is animportant fact that developer must uniformly be supplied to the uppersurface of the applied resist so as to uniformly develop the appliedresist on the overall surface of the substrate.

As a general rule, novolac resin is employed as the resist for use inthe development process, and tetramethylammonium hydroxide (TMAH)solution is, as the developer, employed in which 2.38 wt % of TMAH isdissolved in water. The foregoing water-soluble developer cannot easilywet a water-repellent resist film. Thus, the developer is shed by theresist film. Therefore, the developer cannot easily be spread uniformlyon the overall surface of the resist film, thus resulting in portions,on which the developer is retained in a large quantity, and portions, onwhich the developer is retained in a small quantity, being realized. Asa result, development results in non-uniform state.

If the resist film applied with the developer is allowed to stand,fitting between the resist film and the developer is unsatisfactory,thus resulting in bubbles being generated in the developer. The portion,in which bubbles have been generated, results in insufficientdevelopment being taken place. Thus, a so-called defective developmentis carried out.

If the cleaning process is performed such that the substrate, which isbeing spun, is cleaned with a brush while putting cleaning solution,such as pure water, the cleaning solution splashes to the portion aroundthe substrate. Thus, there arises a problem in that the spin chuck and aportion in the vicinity of the same are contaminated.

SUMMARY OF THE INVENTION

An object of the present invention is to provide an apparatus forprocessing a substrate capable of performing a uniform developmentprocess without a defect in development and a method therefor.

Another object of the present invention is to provide an apparatus forprocessing a substrate capable of preventing splashing of treatmentliquid and thus preventing contamination of the environmental region anda method therefor.

Substrates have been resist-processed by a known method selected fromthree methods consisting of a spinning method, a dipping method and aspraying method. The spinning method has the step of spinning thesubstrate in a cup by a motor to develop, rinse and dry the substrate.The dipping method is a method in which the substrate is dipped in adeveloper to perform uniform development by using vibrations of thesubstrate or by stirring the developer. The spraying method is a methodin which a developer pressurized by a pump or the like is sprayed to thesurface of the substrate. Among the foregoing methods, the spinningmethod has mainly be employed.

According to one aspect of the present invention, there is provided amethod of processing a substrate comprising: a loading step for loadinga substrate onto a support; a cover mounting step for mounting a coveron the substrate in such a manner that a clearance is formed from atleast either surface of the substrate placed on the support; aprocessing step for introducing a treatment liquid into the clearance tobring the treatment liquid into contact with at least either surface ofthe substrate; a cover removing step for removing the cover from thesubstrate; and an unloading step for unloading the substrate from thesupport.

According to another aspect of the present invention, there is providedan apparatus for processing a substrate comprising: a chamber; a supporton which a substrate to be introduced into the chamber is placed; acover for covering the substrate in such a manner that a clearance isformed from at least either surface of the substrate placed on thesupport; supply means for supplying treatment liquid into the clearance;and discharge means for discharging the treatment liquid in theclearance.

According to another aspect of the present invention, there is provideda method of processing a substrate comprising: a loading step forloading a substrate on a support; an inclining step for inclining thesubstrate together with the support; and flowing-down step for causingthe treatment liquid to flow downwards along the surface of thesubstrate from an upper portion of the inclined substrate toward a lowerportion of the inclined substrate.

According to another aspect of the present invention, there is providedan apparatus for processing a substrate comprising: a cup; a supportwhich is disposed in the cup and on which a substrate is placed; meansfor inclining the substrate on the resist with respect to a horizontalplane; a supply gutter for supplying a treatment liquid from a positionadjacent to an upper portion of the inclined substrate; and a receivinggutter for receiving the treatment liquid at a position adjacent to alower portion of the inclined substrate.

On the surface of the substrate, a resist film is, by a resist-filmapplying apparatus, previously formed. After a baking process has beencompleted, a predetermined pattern is exposed to the foregoing resistfilm. In the present invention, after the foregoing exposure process hasbeen completed, a developer in the form of laminar flow is allowed toflow along the upper surface of the substrate so that the developer isuniformly supplied to the upper surface of the resist film. Since a newdeveloper is always supplied to the upper surface of the resist film,the time required to complete the development process can be shortened.Therefore, the present invention enables the uniformity of developmentto be maintained. Thus, a clean, defect-less and excellent product canbe provided, and the throughput can be improved.

To allow the developer in the form of laminar flow to flow, it iseffective to mount a cover for covering overall upper surface of thesubstrate while forming a predetermined clearance from the upper surfaceof the substrate, followed by causing the developer to flow into theclearance. Another method is effective in which the substrate isinclined and the inclination is used to allow the developer to flowalong the upper surface of the developer. Either of the foregoingmethods enables the developer in the laminar flow to be allowed to flowso that the developer is uniformly supplied to the upper surface of theresist film. Thus, a uniform development process exhibiting excellentthroughput can be performed.

In the case where the structure is arranged such that the developer,which has allowed to flow along the upper surface of the substrate, isagain allowed to flow along the upper surface of the substrate by a pumpor the like so that the developer is recycled. Thus, the quantity of thedeveloper can be saved and the running cost can be reduced.

Since the cover coves the upper surface of the substrate, neither therinsing solution nor the developer flows to the components the apparatuswhich surround the support. The substrate can therefore be processed inclean environment.

Additional objects and advantages of the invention will be set forth inthe description which follows, and in part will be obvious from thedescription, or may be learned by practice of the invention. The objectsand advantages of the invention may be realized and obtained by means ofthe instrumentalities and combinations particularly pointed out in theappended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate presently preferred embodiments ofthe invention and, together with the general description given above andthe detailed description of the preferred embodiments given below, serveto explain the principles of the invention.

FIG. 1 is a perspective view schematically showing the overall body of aresist processing system;

FIG. 2 is a partially-broken cross sectional view of a block diagramshowing the structure of an apparatus for processing a substrateaccording to a first embodiment of the present invention;

FIG. 3 is a plan view showing the apparatus for processing a substrateaccording to the first embodiment of the present invention;

FIG. 4 is a perspective block diagram showing the structure of theapparatus for processing a substrate according to the first embodimentof the present invention;

FIG. 5 is a partially enlarged view showing an essential portion of theapparatus for processing a substrate according to the first embodimentof the present invention;

FIG. 6 is a perspective view showing conveyance of a substrate forforming an LCD in the apparatus for processing a substrate according tothe first embodiment of the present invention;

FIG. 7 is a partially enlarged view showing a flow path switch valve forswitching a flow path for treatment liquid;

FIG. 8 is an internal perspective view showing an apparatus forprocessing a substrate having a vertical double-stage type structure;

FIG. 9 is a diagram showing a dipping-type apparatus for processing asubstrate having a mechanism for elevating a cover;

FIG. 10 is a diagram showing the dipping-type apparatus for processing asubstrate having the cover opening and closing mechanism;

FIG. 11 is a plan view showing a dipping-type apparatus for processing asubstrate having a cover opening and closing mechanism;

FIG. 12 is a partial cross sectional view schematically showing anapparatus for use in a resist processing method according to a secondembodiment of the present invention;

FIG. 13 is a perspective view showing a method of placing a substratefor forming an LCD according to the second embodiment of the presentinvention; and

FIG. 14 is a perspective view showing the conveyance of the substratefor forming an LCD according to the second embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring to the attached drawings, preferred embodiments of the presentinvention will now be described. As shown in FIG. 1, a resist processingsystem 1 has a cassette station 3 at an end thereof. The cassettestation 3 is arranged to receive a plurality of cassettes 2 eachaccommodating a substrate S for forming an LCD. The cassette station 3has, at a position adjacent to the front surfaces of the cassettes 2, asub-arm 5 for conveying and positioning the substrate S and holding thesubstrate S to deliver and receive the same to and from main arms 4. Twomain arms 4 are, in series, disposed in such a manner that the main arms4 are able to move in the lengthwise direction in the central portion ofthe processing system 1. A variety of processing units, such asdeveloping units 6 (50), are disposed on the two sides of the passagefor the main arms 4.

In the processing system 1 shown in FIG. 1, a brush scrubber 7 forcleaning the substrate S with a brush thereof, a high-pressure jetcleaning machine 8 for cleaning the same with high pressure jet waterand the like are disposed in series on the side of the cassette station3. Two developing units 6 (50) are disposed in series at oppositepositions across the passage for the main arms 4. Moreover, two heatingunits 9 are stacked adjacent to the developing units 6 (50).

An adhesion unit 11 for subjecting the substrate S to a hydrophobicprocess before the resist film is applied is disposed on the side of theforegoing units through a connection interface unit 10. A cleaning unit12 for cooling is disposed below the adhesion unit 11. Two lines eachconsisting of two heating units 13 are disposed on the side of theadhesion unit 11 and the cleaning unit 12 for cooling in such a mannerthat the two heating units 13 are stacked. Two resist-film applyingunits 14 for applying the resist solution to the substrate S to form aresist film (a photosensitive film) on the surface of the substrate Sare disposed at opposite positions across the passage for the main arms4. Although omitted from illustration, an exposing unit and the like forexposing a predetermined fine pattern to the resist film formed on thesubstrate S are disposed on the side of the resist-film applying units14.

As shown in FIGS. 2 and 3, a cup 22 is disposed in a substantiallycentral portion of a chamber 6a of the developing unit 6. A support 21is disposed in the cup 22. The support 21 has an upper surface having asuction opening of a vacuum suction mechanism (not shown) so as to suckand hold the substrate S on the upper surface of the support 21. Thelower surface of the support 21 is connected to a rod 20a of a first aircylinder 20 so that the support 21 is supported while being permitted tobe moved upwards and downwards. A control unit 45 is connected to acircuit for an air supply source for the first air cylinder 20 so thatthe distance for which the support 21 is moved is optimally controlledin response to a detection signal transmitted from a sensor (not shown).

An annular cup 22 is disposed to surround the substrate S sucked by andheld on the support 21 so as to prevent splashing of the developer andcleaning water (rinsing solution). The cup 22 is made ofcorrosion-resisting resin or metal. The cup 22 has an upper portion 23which is tapered in such a manner that an upper opening 24 of the cup 22has a diameter which permits the substrate S to be smoothly anddownwards introduced into the cup 22. The cup 22 has a bottom portion 25which is slightly inclined with respect to the horizontal plane. Awaste-solution pipe 26 is connected to a lower portion of the bottomportion 25. On the other hand, an exhaust pipe 27 for dischargeatmospheric gas in the cup 22 is connected to an upper portion of thebottom portion 25. An annular wall 28 extends upwards over the bottomportion 25. A rectifying plate 29 is disposed at the top end of theannular wall 28. The rectifying plate 29 is disposed adjacent to thereverse surface of the substrate S placed on the support 21, therectifying plate 29 having a peripheral portion inclined downwards. Therectifying plate 29 having the foregoing structure introduces wastesolution, with which the substrate S has been processed, into the bottomportion 25 of the cup 22.

A plurality of rinsing-solution jet nozzles (not shown) are disposedbelow the support 21 so that pure water is sprayed to the reversesurface of the substrate S placed on the support 21 to clean the reversesurface of the substrate S.

As shown in FIG. 2, a cover 40 is disposed above the support 21. Thecover 40 is connected to and supported by a rod 30a of an air cylinder30 so as to be permitted to move upwards and downwards in the directionof Z-axis. A circuit for an air supply source for the air cylinder 30 isconnected to the control unit 45 so that the operation of the aircylinder 30 is controlled by the control unit 45.

A plurality of projections 40P are formed in the peripheral portion ofthe lower surface of the cover 40. When the cover 40 has been moveddownwards, the projections 40P are pushed against the substrate S on thesupport 21 so that a clearance 41A is formed between the lower surfaceof the cover 40 and the upper surface of the substrate S. It ispreferable that the clearance 41A be set to be within a range from 0.5mm to 10 mm. In a case where the developer is allowed to flow in theclearance 41A, it is preferable that the clearance 41A be set to bewithin a range from 0.5 mm to 2 mm. In a case where the developer istemporarily retained in the clearance 41A so as to dip the substrate Sin the developer, it is preferable that the clearance 41A be set to bewithin a range from 2 mm to 10 mm. Note that it is preferable that theprojections 40P be made of soft engineering plastic to protect thesubstrate S from being damaged.

A plurality of ultrasonic oscillators 44 are embedded in the cover 40. Apower source (not shown) for each of the ultrasonic oscillators 44 isconnected to the control unit 45. Ultrasonic waves oscillated from theultrasonic oscillators 44 are propagated to the surface of the substrateS through the rinsing solution so that the effect of the cleaningoperation in the cleaning process is enhanced.

As shown in FIG. 4, a slit-shape inlet portion 42 and an outlet portion43 are formed on the two side surfaces of the cover 40. The inletportion 42 and the outlet portion 43 are connected to a recessed portion40C formed in the central portion of the lower portion of the cover 40.When the cover 40 covers the substrate S placed on the support 21, thesubstrate S is received within the recessed portion 40C. Moreover, theclearance 41A is formed between the upper surface of the substrate S andthe cover 40. Note that the width of each of the inlet portion 42 andthe outlet portion 43 is about 0.5 mm to about 2 mm.

A flange 40F is formed around the peripheral portion of the lowerportion of the cover 40. The flange 40F is pushed against a frame 89through an O-ring (not shown) to seal solution flowing in the clearance41A and/or solution retained temporarily in the clearance 41A so thatdownward leakage of the solution is prevented. The upper surface of theflange 40 and that of the substrate S are substantially flush with eachother.

A developer supply source 33 and a rinsing-solution supply source 34 areconnected to the inlet portion 42 of the cover 40 through a first flowpath 42a. Moreover, a dry-gas supply source 36 is connected to the inletportion 42 through a second flow path 42b. The developer supply source33 accommodates tetramethylammonium hydroxide (TMAH) solution. Therinsing-solution supply source 34 accommodates pure water. The dry-gassupply source 36 accommodates dry air or dry nitrogen gas.

On the other hand, a temporary reserving portion 37 is connected to theoutlet portion 43 of the cover 40 through a flow path 43a. The capacityof the temporary reserving portion 37 is sufficiently larger than thatof the clearance 41A. Therefore, the temporary reserving portion 37 hasa function of separating gas and liquid from each other so that the gascomponent is allowed to flow through a discharge passage 38a so as to bedischarged to the outside of a clean room from a discharge unit 38. Onthe other hand, the liquid component is allowed to flow through aregenerating passage 39a so that impurities of the liquid component areremoved by a regenerating unit 39. Then, the solution regenerated in theregenerating unit 39 is returned to the developer supply source 33.

By making the clearance 41A to be a narrow value of about 0.5 mm toabout 2 mm, the developer and rinsing solution, which pass through theclearance 41A, can be formed into laminar flows. Thus, the developer andthe rinsing solution can uniformly be supplied to the overall surface ofthe resist film on the upper surface of the substrate S even if thequantity is reduced. In order to cause the treatment liquid to uniformlypass through the clearance 41A, the flow path circuit for the treatmentliquid is hermetically sealed to prevent liquid leakage by a bindingmember (not shown) comprising a buffer tank portion (not shown) and apressure-loss generating portion (not shown).

As shown in FIG. 7, a fluid switch valve 35 is disposed at a branchedportion of the first flow path 42a. With the fluid switch valve 35,switching is enabled between a communication passage 33a for thedeveloper supply source 33 and a communication passage 34a for therinsing-solution supply source 34. That is, the fluid switch valve 35has a rotor 35A in which two flow paths 35b and 35c are formed. Byrotating the rotor 35A, the flow path 35b can be connected to thecommunication passage 33a as well as the flow path 35c can be connectedto the first flow path 42a. As an alternative to this, the flow path 35bcan be connected to the first flow path 42a as well as the flow path 35ccan be connected to the communication passage 34a.

As shown in FIGS. 5 and 6, a mechanism for upwardly pushing a substrateand having pins 60 is disposed below the support 21 so that thesubstrate S is raised from the support 21 by the plural pushing pins 60.The pushing pins 60 are connected to a rod 48a of a second air cylinder48 through a common plate member 49 so that the pushing pins 60 areenabled to project over the support 21 through openings 21a formed inthe support 21. The substrate S is, by the pushing pins 60, raised overthe support 21 so that the substrate S is delivered and received betweenthe main arm 4 and the support 21. Each of the main arms 4 has an X-axisdrive mechanism, Y-axis drive mechanism, Z-axis drive mechanism and aQ-rotation drive mechanism so as to be capable of moving along thecentral passage to make an access to each of the processing unit 6 (50),9, and 11 to 13. The main arm 4 is able to introduce the substrate Sinto each of the processing unit 6 (50), 9, and 11 to 13 and todischarge the substrate S from the processing unit 6 (50), 9, and 11 to13. In the case where the substrate S is introduced or discharged intoor from the developing unit 6, the main arm 4 holding the substrate S isintroduced into the developing unit 6 through the opening 6b.

As shown in FIG. 8, two developing units 6 may be vertically stacked.Since the vertical thickness of each developing unit 6 must be reducedin the foregoing case, the cover 40 is made to be slidable in the XYplane and vertical movement in the direction of the Z-axis is inhibited.That is, the cover 40 is supported by the X-axis drive mechanism (notshown) or the Y-axis drive mechanism (not shown) so as to be movedhorizontally in parallel within the chamber 6a.

The operation of developing the substrate S by using the foregoingdeveloping unit 6 will now be described.

Initially, the substrate S is discharged from the cassette 2 of thecassette station 3 by the sub-arm 5 to deliver the substrate S to themain arm 4. The main arm 4 introduces the substrate S into the brushscrubber 7 so that the substrate S is cleaned with the brush. Then, thesubstrate S is dried in the heating units 9. Note that the substrate Smay be cleaned with high pressure jet water in the high-pressure jetcleaning machine 8 if necessary for a process to be performed.

Then, the substrate S is subjected to the adhesion process by theadhesion unit 11. Then, the substrate S is cooled by the cleaning unit12 for cooling, and then a resist is applied to the surface of thesubstrate S by the resist-film applying unit 14. Then, the substrate Sis subjected to a baking process by the heating units 13, and then theresist film is subjected to an exposing process by an exposing unit (notshown). Then, the substrate S, which has been exposed to light, isintroduced into the developing unit 6.

In the developing unit 6, the support 21 is initially moved upwards toreceive the substrate S from the main arm 4, and then suck and hold thesubstrate S. Then, the support 21 is moved downwards. Then, the cover 40covers the upper surface of the substrate S. Thus, the narrow clearance41A of about 0.5 mm to about 1 mm is formed between the upper surface ofthe substrate S and the cover 40.

After the cover 40 has been mounted, the developer is supplied into theclearance 41A in a circular manner so that the resist film of thesubstrate S is developed. The developer is introduced into the clearance41A from the developer supply source 33 through the inlet portion 42.Then, the developer flows while being brought into contact with theupper surface of the substrate S, and then discharged through the outletportion 43, followed by being returned to the developer supply source33. The developer is, in the clearance 41A, formed into a laminar flowso that the developer is uniformly supplied in a small quantity. As aresult, an excellent developing process can be performed. Since a noveldeveloper is always supplied to the upper surface of the resist film,the time required to complete the development can be shortened.

After the development process has been completed, the fluid switch valve35 is operated to switch the flow path so that the rinsing solution issupplied into the clearance 41A from the rinsing-solution supply source34. As a result, the developer left on the substrate S is cleaned.Simultaneously with supply of the rinsing solution, cleaning water issprayed to the reverse surface of the substrate S from a nozzle (notshown) disposed below the substrate S so that the reverse surface of thesubstrate S is cleaned.

After the rinsing process has been completed, dry gas is supplied intothe clearance 41A from the dry-gas supply source 36 so that thesubstrate S is dried. After the substrate S has been dried, the cover 40is removed from the substrate S. When the cover 40 is removed, previousinjection of dry gas or the like into the clearance 41A enables thecover 40 to be removed easily. Then, the substrate S is heated by theheating units 9, and then accommodated in the cassette 2 of the cassettestation 3.

The developing unit has the foregoing structure in which the developeris formed into a laminar flow which flows along the upper surface of thesubstrate S so that the developer is uniformly supplied to the uppersurface of the resist film. Since a novel developer is always suppliedto the resist film, the time required to complete the developmentprocess can be shortened and, therefore, the throughput can be improved.Moreover, since the foregoing unit is not required to have the spinningmechanism, the overall size of the unit can be reduced.

A variety of modifications of the foregoing embodiment will now bedescribed.

As shown in FIG. 9, the two surfaces of the substrate S may be incontact with the treatment liquid in a cover 40A. The cover 40Acomprises a lower cover member 40a and an upper cover member 40b. Thecentral portion on the inside of the lower cover member 40a is recessed.When the substrate S is placed on the lower cover member 40a, a lowerclearance 41B is formed between the lower cover member 40a and thesubstrate S. The upper cover member 40b is supported by the rod 30a ofthe air cylinder 30 so as to be capable of moving vertically. When theupper cover member 40b is set to cover the lower cover member 40a, anupper clearance 41A is formed between the upper cover member 40b and thesubstrate S. The lower cover member 40a and the upper cover member 40bare formed to be brought into contact with each other at theirperipheral portions. A sealing O-ring 46 is disposed on the surface ofcontact. As a result, outward leakage of the treatment liquid introducedinto the upper and lower clearances 41A and 41B can be prevented.

The foregoing cover 40A enables the treatment liquid to flow into theupper and lower clearances 41A and 41B and causes the treatment liquidto be retained in the same. That is, since the cover 40A enables thesubstrate S to be dipped in the treatment liquid for a predeterminedtime, it is suitable to be employed in the development process.

As shown in FIG. 10, an opening/closing type cover 40B may be employedto cause the treatment liquid to be brought into contact with the twosurfaces of the substrate S. The cover 40B comprises upper and lowercover members 40g and 40h, one sides of which are connected to eachother by a hinge 47. In the case where the treatment liquid is allowedto flow along the short side of the substrate S as shown in FIG. 11, thedistance for which the treatment liquid must flow can be shortened.Thus, deterioration in the treatment liquid can be preventedsatisfactorily so that the processing efficiency is further improved.

In a case where the process for rinsing the substrate S is performedsuch that the rinsing solution in the clearances 41A and 41B isoscillated with ultrasonic waves transmitted from the ultrasonicoscillator 44, the particles can be readily released from the surface ofthe substrate. This helps to enhance the efficiency of the washing.

Referring to FIGS. 12 to 14, a second embodiment of the presentinvention will now be described.

As shown in FIG. 12, a support 52 having a rectifying plate 56 isdisposed in the central portion of the chamber of the development unit50. The substrate S is placed on the rectifying plate 56 and the support52. Moreover, a vacuum suction mechanism (not shown) sucks and holds thesubstrate S on the upper surface of the support 52. The lower surface ofthe support 52 is connected to an internal mechanism of a drive portion51 through a shaft 51a. The drive portion 51 includes a Z-cylinder (notshown) for vertically moving the support 52 and a Q-motor (not shown)for spinning the support 52.

A cup 53 is formed to surround the substrate S sucked to and held on thesupport 52. The cup 53 has a bottom portion 54 on which an annular wall55 is stood erect. The rectifying plate 56 is disposed adjacent to thetop end of the annular wall 55.

The rectifying plate 56 is supported in such a manner that it is able toswing in the cup 53 relative to a hinge portion 57. The bottom portion54 of the cup 53 has an opening 58. When a pin 60A is projected upwardsthrough the opening 58, one side of the rectifying plate 56 is raised bythe pin 60A. The pin 60A is supported by a plunger 59, the operation ofwhich is controlled by the control unit 45.

When the pin 60A pushes the rectifying plate 56 upwards, the substrate Sis, together with the rectifying plate 56, pushed upwards in a directionindicated by an arrow 61 so that the substrate S is inclined by anangular degree of about 10°. A supply gutter 62 is disposed adjacent tothe upper portion of the inclined substrate S, while a receiving gutter63 is disposed adjacent to the lower portion of the inclined substrateS. The supply gutter 62 has a slit-shape supply port. A developer supplyunit 64 or a rinsing-solution supply unit 65 is disposed in the flowpath of the supply gutter 62 and the receiving gutter 63.

The developer is supplied from the developer supply unit 64, followed bybeing allowed to flow downwards onto the substrate S from the upperportion of the inclined substrate S through the supply gutter 62. Then,the developer reaches the lower portion of the substrate S, and then thedeveloper is introduced into the receiving gutter 63. Then, thedeveloper is returned to the developer supply unit 64. By using therinsing-solution supply unit 65, the inclined substrate S can be rinsedby a similar process.

In the case where the developer is allowed to flow along the uppersurface of the substrate S as shown in FIG. 13, it is preferable that aguide member 71 having guide walls 70 at the two ends thereof beemployed. That is, when the substrate S is, together with the guidemember 71, placed on the support 52, the developer is guided by theguide walls 70 so that side leakage of the developer from the uppersurface of the substrate S is prevented. Thus, the developer is causedto flow into the receiving gutter 63. Note that the substrate S isplaced on the support 52 by the main arm 4, as shown in FIG. 14.

Since the treatment liquid does not splash to the surrounding portion inthe foregoing unit according to this embodiment, the inner surface ofthe cup 22 (53) and portion around the same cannot be contaminated.Therefore, a clean environment can be maintained, and adhesion ofparticles to the substrate S can substantially be prevented. Moreover,an advantage can be realized in maintaining the apparatus as comparedwith the conventional apparatus. Since a new developer is alwayssupplied to the upper surface of the resist film, the time required tocomplete the development process can be shortened and, therefore, thethroughput can be improved. Moreover, since the developer can berecycled, the running cost can be reduced and an economical advantagecan be realized.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details, representative devices, andillustrated examples shown and described herein. Accordingly, variousmodifications may be made without departing from the spirit or scope ofthe general inventive concept as defined by the appended claims andtheir equivalents.

What is claimed is:
 1. An apparatus for processing a large-sizedsubstrate, used to form a liquid crystal display, utilizing a treatmentliquid including a developing solution or a rinsing solution, theapparatus comprising:a chamber; a support on which a substrate to beintroduced into said chamber is placed, the substrate having aphotoresist film; a cover for covering the substrate in such a mannerthat a clearance is formed from at least either surface of the substrateplaced on said support; supply means for supplying a treatment liquidfrom a first side of said cover into said clearance; and discharge meansfor discharging the treatment liquid from said clearance to a secondside of said cover so that the treatment liquid is formed into a laminarflow that is substantially parallel with a surface of the photoresistfilm in said clearance, so as to bring the treatment liquid whileflowing into contact with the photoresist film.
 2. An apparatusaccording to claim 1, further comprising elevation means for elevatingsaid cover.
 3. An apparatus according to claim 1, further comprisingelevation means for elevating said support.
 4. An apparatus according toclaim 1, wherein said cover has, in the peripheral portion of the lowersurface thereof, a plurality of projections for pushing the substrate.5. An apparatus according to claim 1, wherein said cover has anultrasonic oscillator.
 6. An apparatus according to claim 1, whereinsaid cover is formed into a substantially rectangular shape.
 7. Anapparatus according to claim 1, wherein the treatment liquid supplymeans hasdeveloper supply source for supplying a developer into saidclearance; rinsing liquid supply source for supplying rinsing liquidinto said clearance; and flow-path switch valve for switching the flowpath of said developer supply source and the flow path of said rinsingliquid supply source.
 8. An apparatus according to claim 1, whereinsaidcover has an upper cover member for forming an upper clearance from theupper surface of the substrate; a lower cover member for forming a lowerclearance from the lower surface of the substrate; and a sealing memberto be disposed between said upper and lower covers which are broughtinto contact with each other.
 9. An apparatus according to claim 1,further comprising:dry gas supplying means for supplying a dry gas intothe clearance so as to dry the cover and the substrate.
 10. An apparatusaccording to claim 1, further comprising:a regenerating unit configuredto regenerate the liquid discharged from the clearance and supply theregenerated liquid to the supply means so that the regenerated liquid isreused.
 11. An apparatus according to claim 2, furthercomprising:control means for controlling a movement of the elevationmeans in such a manner that the clearance is set within a range of 0.5-2mm.
 12. An apparatus for processing a large-sized substrate, used toform a liquid crystal display, utilizing a treatment liquid including adeveloping solution or a rinsing solution, the apparatus comprising:acup; a support which is disposed in said cup and on which a substratehaving a photoresist film is placed; means for inclining the substrateplaced on said support with respect to a horizontal plane; a supplygutter for supplying treatment liquid from a position adjacent to anupper portion of said inclined substrate; and a receiving gutter forreceiving the treatment liquid at a position adjacent to a lower portionof said inclined substrate so that the treatment liquid is formed into alaminar flow that is substantially parallel with a surface of thephotoresist film in said clearance, so as to bring the treatment liquidwhile flowing into contact with the photoresist film.
 13. An apparatusaccording to claim 12, further comprising:dry gas supply means forspraying dry gas onto the substrate so as to dry the substrate.
 14. Anapparatus according to claim 12, further comprising:a regenerating unitconfigured to regenerate liquid that has been in contact with thesubstrate and supply the liquid that has been regenerated to the supplymeans so that the regenerated liquid is reused.